Magnetic and optical properties of self-organized InMnAs quantum dots

被引:14
|
作者
Yoon, Im Taek [1 ]
Lee, Sejoon [1 ]
Shon, Yoon [1 ]
Lee, Seung Woong [2 ]
Kang, Tae Won [1 ]
机构
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
关键词
Semiconductors; Nanostructures; Optical properties; Magnetic properties; SEMICONDUCTOR;
D O I
10.1016/j.jpcs.2010.12.008
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, T-C=80 K. It is likely that the ferromagnetic exchange coupling of sample with T-C=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. P-L emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 degrees C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:181 / 184
页数:4
相关论文
共 50 条
  • [1] Ferromagnetism in One Layer of Self-organized InMnAs Quantum Dots
    Yoon, Im Taek
    Lee, Sejoon
    Shon, Yoon
    Lee, Seung Woong
    Kang, Tae Won
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2011, 24 (05) : 1393 - 1396
  • [2] Structural and optical properties of CdSe/ZnSe self-organized quantum dots
    Maehashi, K
    Yasui, N
    Ota, T
    Noma, T
    Murase, Y
    Nakashima, H
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1116 - 1120
  • [3] MBE growth and optical properties of self-organized dots of CdTe and (Cd,Mn)Te
    Kuroda, S
    Itoh, N
    Terai, Y
    Takita, K
    Okuno, T
    Nomura, M
    Masumoto, Y
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) : 31 - 36
  • [4] Self-organized ZnSe quantum dots: Syntheses and characterization
    Kaushik, Diksha
    Singh, R. R.
    Sharma, A. B.
    Gupta, D.
    Sharma, M.
    Pandey, R. K.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (03) : 1502 - 1511
  • [5] Self-organized growth and magnetic properties of epitaxial silicide nanoislands
    Tripathi, J. K.
    Levy, R.
    Camus, Y.
    Dascalu, M.
    Cesura, F.
    Chalasani, R.
    Kohn, A.
    Markovich, G.
    Goldfarb, I.
    APPLIED SURFACE SCIENCE, 2017, 391 : 24 - 32
  • [6] Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
    Lozovoy, K. A.
    Voytsekhovskiy, A. V.
    Kokhanenko, A. P.
    Satdarov, V. G.
    Pchelyakov, O. P.
    Nikiforov, A. I.
    OPTO-ELECTRONICS REVIEW, 2014, 22 (03) : 171 - 177
  • [7] Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy
    Miao, ZL
    Chua, SJ
    Chye, YH
    Chen, P
    Tripathy, S
    JOURNAL OF CRYSTAL GROWTH, 2005, 276 (1-2) : 72 - 76
  • [8] Selective growth of InAs/GaAs self-organized quantum dots by shadow mask technique
    Songmuang, R
    Kiravittaya, S
    Thainoi, S
    Changmuang, P
    Sopitpan, S
    Ratanathammaphan, S
    Sawadsaringkarn, M
    Panyakeow, S
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1053 - 1056
  • [9] InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy
    Kiravittaya, S
    Songmuang, R
    Changmuang, P
    Sopitpan, S
    Ratanathammaphan, S
    Sawadsaringkarn, M
    Panyakeow, S
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1010 - 1015
  • [10] Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties
    Ohmori, Masato
    Vitushinskiy, Pavel
    Kojima, Tomoya
    Sakaki, Hiroyuki
    APPLIED PHYSICS EXPRESS, 2013, 6 (04)