Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms

被引：41

作者：

Yang, Hang ^{[1
]}

Chen, Wei ^{[2
]}

Zheng, Xiaoming ^{[1
]}

Yang, Dongsheng ^{[2
]}

Hu, Yuze ^{[2
]}

Zhang, Xiangzhe ^{[2
]}

Ye, Xin ^{[3
]}

Zhang, Yi ^{[1
]}

Jiang, Tian ^{[2
]}

Peng, Gang ^{[1
]}

Zhang, Xueao ^{[4
]}

Zhang, Renyan ^{[2
]}

Deng, Chuyun ^{[1
]}

Qin, Shiqiao ^{[2
]}

机构：

[1] Natl Univ Def Technol, Coll Arts & Sci, Changsha 410073, Peoples R China

[2] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China

[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[4] Xiamen Univ, Coll Phys Sci & Technol, Xiamen 361005, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 01期

关键词：

Bi2O2Se; Multilayer; Photodetector; Near-Infrared; GRAPHENE; PHOTODETECTORS; PHOTOTRANSISTORS; OXIDE;

D O I：

10.1186/s11671-019-3179-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (similar to 101 A/W), a quick response time (similar to 30 ms), a high external quantum efficiency (similar to 20,300%), and a high detection rate (1.9 x 10(10) Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

引用

页数：6

共 31 条

[11] Photo-induced excitonic structure renormalization and broadband absorption in monolayer tungsten disulphide [J].

Jiang, Tian ;

Chen, Runze ;

Zheng, Xin ;

Xu, Zhongjie ;

Tang, Yuhua .

OPTICS EXPRESS, 2018, 26 (02) :859-869

[12] Broadband High-Responsivity Photodetectors Based on Large-Scale Topological Crystalline Insulator SnTe Ultrathin Film Grown by Molecular Beam Epitaxy [J].

Jiang, Tian ;

Zang, Yunyi ;

Sun, Honghui ;

Zheng, Xin ;

Liu, Yu ;

Gong, Yan ;

Fang, Liang ;

Cheng, Xiang'ai ;

He, Ke .

ADVANCED OPTICAL MATERIALS, 2017, 5 (05)

[13] High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals [J].

Kim, Sunkook ;

Konar, Aniruddha ;

Hwang, Wan-Sik ;

Lee, Jong Hak ;

Lee, Jiyoul ;

Yang, Jaehyun ;

Jung, Changhoon ;

Kim, Hyoungsub ;

Yoo, Ji-Beom ;

Choi, Jae-Young ;

Jin, Yong Wan ;

Lee, Sang Yoon ;

Jena, Debdeep ;

Choi, Woong ;

Kim, Kinam .

NATURE COMMUNICATIONS, 2012, 3

[14]

Koppens FHL, 2014, NAT NANOTECHNOL, V9, P780, DOI [10.1038/nnano.2014.215, 10.1038/NNANO.2014.215]

[15] Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics [J].

Kuo, Cheng-Hsiang ;

Wu, Jyh-Ming ;

Lin, Su-Jien .

NANOSCALE RESEARCH LETTERS, 2013, 8 :1-8

[16] High-Performance Near-Infrared Photodetector Based on Ultrathin Bi2O2Se Nanosheets [J].

Li, Jie ;

Wang, Zhenxing ;

Wen, Yao ;

Chu, Junwei ;

Yin, Lei ;

Cheng, Ruiqing ;

Lei, Le ;

He, Peng ;

Jiang, Chao ;

Feng, Liping ;

He, Jun .

ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (10)

[17] Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths [J].

Lin, Keng-Te ;

Chen, Hsuen-Li ;

Lai, Yu-Sheng ;

Yu, Chen-Chieh .

NATURE COMMUNICATIONS, 2014, 5

[18] Progress, Challenges, and Opportunities for 2D Material Based Photodetectors [J].

Long, Mingsheng ;

Wang, Peng ;

Fang, Hehai ;

Hu, Weida .

ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (19)

[19] Graphene-based optical modulators [J].

Luo, Siyuan ;

Wang, Yanan ;

Tong, Xin ;

Wang, Zhiming .

NANOSCALE RESEARCH LETTERS, 2015, 10 :1-11

[20] High-Gain Graphene-Titanium Oxide Photoconductor Made from Inkjet Printable Ionic Solution [J].

Manga, Kiran Kumar ;

Wang, Shuai ;

Jaiswal, Manu ;

Bao, Qiaoliang ;

Loh, Kian Ping .

ADVANCED MATERIALS, 2010, 22 (46) :5265-5270

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