Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms

被引：41
作者：
Yang, Hang [1 ]
Chen, Wei [2 ]
Zheng, Xiaoming [1 ]
Yang, Dongsheng [2 ]
Hu, Yuze [2 ]
Zhang, Xiangzhe [2 ]
Ye, Xin [3 ]
Zhang, Yi [1 ]
Jiang, Tian [2 ]
Peng, Gang [1 ]
Zhang, Xueao [4 ]
Zhang, Renyan [2 ]
Deng, Chuyun [1 ]
Qin, Shiqiao [2 ]
机构：
[1] Natl Univ Def Technol, Coll Arts & Sci, Changsha 410073, Peoples R China
[2] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[4] Xiamen Univ, Coll Phys Sci & Technol, Xiamen 361005, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 01期
关键词：
Bi2O2Se; Multilayer; Photodetector; Near-Infrared; GRAPHENE; PHOTODETECTORS; PHOTOTRANSISTORS; OXIDE;
D O I：
10.1186/s11671-019-3179-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (similar to 101 A/W), a quick response time (similar to 30 ms), a high external quantum efficiency (similar to 20,300%), and a high detection rate (1.9 x 10(10) Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.
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页数：6
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