Low voltage, low power, compact, high accuracy, high precision PTAT temperature sensor for deep sub-micron CMOS systems

被引:6
作者
Falconi, Christian [1 ]
Fratini, Marco [1 ]
D'Amico, Arnaldo [1 ]
Scotti, Giuseppe [2 ]
Trifiletti, Alessandro [2 ]
机构
[1] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, Via Politecn 1, I-00133 Rome, Italy
[2] Univ Roma La Sapienza, Dipartimento Ingn Elettr, Rome, Italy
来源
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年
关键词
D O I
10.1109/ISCAS.2008.4541864
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Temperature measurement is becoming increasingly important in integrated circuits and microsystems; nevertheless, existing techniques for the integration of high accuracy, high precision temperature sensors are not optimal for deep submicron CMOS processes. Here we describe a low voltage, low power, compact, high accuracy, high precision temperature sensor for deep sub-micron CMOS systems; our approach takes advantage of charge balancing and charge sharing for low current consumption, does not use resistors for compactness, and takes advantage of both PTAT and autozero techniques for high accuracy and high precision; the circuit can be operated at low supply voltages. As a proof of concept, we report transistor level simulations in a standard 0.13 mu m process; the sensor only sinks about 6 mu A from a 1.2V supply voltage, achieving a power dissipation as low as 7.2 mu W.
引用
收藏
页码:2102 / +
页数:2
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