Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer

被引：8

作者：

Asai, T. ^{[1
]}

Nonaka, K. ^{[1
]}

Ban, K. ^{[1
]}

Nagata, K. ^{[1
]}

Nagamatsu, K. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlGaN; MOVPE; doping; dislocations; morphology; VAPOR-PHASE EPITAXY; SAPPHIRE SUBSTRATE; MOVPE;

D O I：

10.1002/pssc.200983591

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on a new technology for growing low-dislocation-density AlGaN in which a Mg-doped AlN underlying layer is used. By growing AlxGa1-xN on AlN:Mg with AlN molar fractions x of 0.3, 0.5 and 0.7, the density of misfit dislocations is much reduced compared with that in the case of growing AlGaN on undoped AlN. In addition, the surface becomes atomically flat. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 8 条

[1]

EDGAR JH, 1999, PROPERTIES PROCESSIN, P264

[2] TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment [J].

Hijikuro, M. ;

Kuwano, N. ;

Takeuchi, M. ;

Aoyagi, Y. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1832-1835

[3] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate [J].

Iida, K. ;

Watanabe, H. ;

Takeda, K. ;

Nagai, T. ;

Sumii, T. ;

Nagamatsu, K. ;

Kawashima, T. ;

Balakrishnan, K. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. ;

Bandoh, A. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2000-2004

[4] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE [J].

Imura, M. ;

Nakano, K. ;

Kitano, T. ;

Fujimoto, N. ;

Okada, N. ;

Balakrishnan, K. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. ;

Shimono, K. ;

Noro, T. ;

Takagi, T. ;

Bandoh, A. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07) :1626-1631

[5] Dislocations in AIN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy [J].

Imura, Masataka ;

Nakano, Kiyotaka ;

Fujimoto, Naoki ;

Okada, Narihito ;

Balakrishnan, Krishnan ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Noro, Tadashi ;

Takagi, Takashi ;

Bandoh, Akira .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A) :1458-1462

[6] High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN [J].

Nagamatsu, Kentaro ;

Okada, Narihito ;

Sugimura, Hiroki ;

Tsuzuki, Hirotoshi ;

Mori, Fumiaki ;

Iida, Kazuyoshi ;

Bando, Akira ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasakia, Isamu .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :2326-2329

[7] Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy [J].

Okada, N ;

Fujimoto, N ;

Kitano, T ;

Narita, G ;

Imura, M ;

Balakrishnan, K ;

Iwaya, M ;

Kamiyama, S ;

Amano, H ;

Akasaki, I ;

Shimono, K ;

Noroi, T ;

Takagi, T ;

Bandoh, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A) :2502-2504

[8] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer [J].

Tsuzuki, Hirotoshi ;

Mori, Fumiaki ;

Takeda, Kenichiro ;

Ichikawa, Tomoki ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Yoshida, Harumasa ;

Kuwabara, Masakazu ;

Yamashita, Yoji ;

Kan, Hirofumi .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06) :1199-1204

← 1 →