Nonlithographic Fabrication of Crystalline Silicon Nanodots on Graphene

被引：11

作者：

Tai, Guo'an ^{[1
,2
,3
,4
]}

Wang, Kai ^{[1
,2
]}

Sun, Zhenhua ^{[1
,2
]}

Yin, Jun ^{[3
,4
]}

Ng, Sheung Mei ^{[1
,2
]}

Zhou, Jianxin ^{[3
,4
]}

Yan, Feng ^{[1
,2
]}

Leung, Chi Wah ^{[1
,2
]}

Wong, Kin Hung ^{[1
,2
]}

Guo, Wanlin ^{[3
,4
]}

Lau, Shu Ping ^{[1
,2
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

[3] Nanjing Univ Aeronaut & Astronaut, Minist Educ, Key Lab Intelligent Nano Mat & Devices, Nanjing 210016, Peoples R China

[4] Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2012年 / 116卷 / 01期

关键词：

AMORPHOUS-SILICON; TRANSPORT; ARRAYS; FILMS; TRANSISTORS; SCATTERING; ALUMINA; GROWTH; MASKS; OXIDE;

D O I：

10.1021/jp210713q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 degrees C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.

引用

页码：532 / 537

页数：6

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