2W/mm output power density at 1 GHz for diamond FETs

被引：125
作者：
Kasu, M [1 ]
Ueda, K [1 ]
Ye, H [1 ]
Yamauchi, Y [1 ]
Sasaki, S [1 ]
Makitnoto, T [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 22期
关键词：
D O I：
10.1049/el:20053194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 mu m and gate width of 100 pro, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.
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收藏
页码：1249 / 1250
页数：2
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