Superlattice-enhanced silicon soft X-ray and charged particle detectors with nanosecond time response

被引:15
|
作者
Looker, Q. [1 ]
Aguirre, B. A. [1 ]
Hoenk, M. E. [2 ]
Jewell, A. D. [2 ]
Sanchez, M. O. [1 ]
Tierney, B. D. [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87123 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
关键词
Silicon detectors; Pulsed power; Electron detectors; Soft X-ray detectors; ICF; HED physics; QUANTUM EFFICIENCY; PHOTODIODES; ENERGY;
D O I
10.1016/j.nima.2018.11.052
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon detectors are an essential measurement tool for Inertial Confinement Fusion and High-Energy-Density Physics Applications, where temporal response of the order of nanoseconds is essential. Soft X-rays (<1 keV), Ultraviolet light, and low-energy electrons (<10 keV) can provide essential information in diagnosing rapidly changing plasma conditions, but reducing the detector dead layer is essential to improving detector response for these shallowly absorbed particles. This paper details a study of silicon detector surface preparation methods such as ion implant parameters, and the addition of a quantum 2D superlattice, to produce fast detectors that are highly sensitive to shallowly absorbed radiation. Measurements of visible light quantum efficiency, electron responsivity, and pulsed x-ray response indicate that detectors with a 2-layer superlattice enjoy a significant benefit over equivalent detectors using an ion implant at the illuminated surface.
引用
收藏
页码:148 / 153
页数:6
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