Superlattice-enhanced silicon soft X-ray and charged particle detectors with nanosecond time response

被引:15
作者
Looker, Q. [1 ]
Aguirre, B. A. [1 ]
Hoenk, M. E. [2 ]
Jewell, A. D. [2 ]
Sanchez, M. O. [1 ]
Tierney, B. D. [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87123 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
关键词
Silicon detectors; Pulsed power; Electron detectors; Soft X-ray detectors; ICF; HED physics; QUANTUM EFFICIENCY; PHOTODIODES; ENERGY;
D O I
10.1016/j.nima.2018.11.052
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon detectors are an essential measurement tool for Inertial Confinement Fusion and High-Energy-Density Physics Applications, where temporal response of the order of nanoseconds is essential. Soft X-rays (<1 keV), Ultraviolet light, and low-energy electrons (<10 keV) can provide essential information in diagnosing rapidly changing plasma conditions, but reducing the detector dead layer is essential to improving detector response for these shallowly absorbed particles. This paper details a study of silicon detector surface preparation methods such as ion implant parameters, and the addition of a quantum 2D superlattice, to produce fast detectors that are highly sensitive to shallowly absorbed radiation. Measurements of visible light quantum efficiency, electron responsivity, and pulsed x-ray response indicate that detectors with a 2-layer superlattice enjoy a significant benefit over equivalent detectors using an ion implant at the illuminated surface.
引用
收藏
页码:148 / 153
页数:6
相关论文
共 14 条
  • [1] Claus L., 2015, P SPIE, V9591
  • [2] Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons
    Funsten, HO
    Suszcynsky, DM
    Ritzau, SM
    Korde, R
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 2561 - 2565
  • [3] OPTICAL-PROPERTIES OF INTRINSIC SILICON AT 300 K
    GREEN, MA
    KEEVERS, MJ
    [J]. PROGRESS IN PHOTOVOLTAICS, 1995, 3 (03): : 189 - 192
  • [4] Stable silicon photodiodes for absolute intensity measurements in the VUV and soft x-ray regions
    Gullikson, EM
    Korde, R
    Canfield, LR
    Vest, RE
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 : 313 - 316
  • [5] Superlattice-doped silicon detectors: progress and prospects
    Hoenk, Michael E.
    Nikzad, Shouleh
    Carver, Alexander G.
    Jones, Todd J.
    Hennessy, John
    Jewell, April D.
    Sgro, Joseph
    Tsur, Shraga
    McClish, Mickel
    Farrell, Richard
    [J]. HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY VI, 2014, 9154
  • [6] MEASUREMENTS OF THE ELECTRON BACKSCATTERING COEFFICIENT FOR QUANTITATIVE EPMA IN THE ENERGY-RANGE OF 4 TO 40 KEV
    HUNGER, HJ
    KUCHLER, L
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : K45 - K48
  • [7] Silicon photodiode characterization from 1 eV to 10 keV
    Idzorek, GC
    Bartlett, RJ
    [J]. EUX, X-RAY, AND GAMMA-RAY INSTRUMENTATION FOR ASTRONOMY VIII, 1997, 3114 : 349 - 356
  • [8] Kato T., 1964, JPN J APPL PHYS, V3, P377
  • [9] STABLE, HIGH QUANTUM EFFICIENCY, UV-ENHANCED SILICON PHOTODIODES BY ARSENIC DIFFUSION
    KORDE, R
    GEIST, J
    [J]. SOLID-STATE ELECTRONICS, 1987, 30 (01) : 89 - 92
  • [10] ONE GIGARAD PASSIVATING NITRIDED OXIDES FOR 100-PERCENT INTERNAL QUANTUM EFFICIENCY SILICON PHOTODIODES
    KORDE, R
    CABLE, JS
    CANFIELD, LR
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) : 1655 - 1659