Investigating the thermal stability of the chemical vapour deposited zirconium carbide layers

被引:10
作者
Biira, Saphina [1 ]
Thabethe, T. T. [2 ]
Hlatshwayo, T. T. [2 ]
Bissett, H. [3 ]
Ntsoane, T. [3 ]
Malherbe, J. B. [2 ]
机构
[1] Busitema Univ, Dept Phys, Tororo, Uganda
[2] Univ Pretoria, Dept Phys, Pretoria, South Africa
[3] South African Nucl Energy Corp, Pretoria, South Africa
关键词
Annealing temperature; Chemical vapour deposition; ZrC layers; Microstructural properties; Surface morphology; RAMAN-SPECTROSCOPY; GRAIN-GROWTH; EVOLUTION; ZRC; MICROSTRUCTURE; PARTICLES; FILMS;
D O I
10.1016/j.jallcom.2020.155003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of thermal treatment on zirconium carbide (ZrC) layers deposited by chemical vapour deposition process was investigated using X-ray diffraction (XRD), Raman spectroscopy, nanoindention and scanning electron microscopy (SEM). The ZrC layers deposited at 1400 degrees C (composed of 96% ZrC and 4% C) were annealed at 1500, 1600, 1700 and 1800 degrees C for 2 h under high vacuum of 2.6 x 10(-7) mbar. After annealing, the lattice constant and the average crystallite sizes were found to increase whereas the lattice strain and dislocation density decreased. The preferred orientation of the as-deposited layers was (220); it changed to (200) when annealed at 1500 degrees C and 1600 degrees C. At annealing temperature of 1700 degrees C and 1800 degrees C, the preferred orientation was (220) just like for the as-deposited ZrC layers. From Raman spectroscopy analysis, the I-D/I-G ratio reduced from 0.694 to 0.414 with annealing temperature indicating an improvement in crystallinity level and a decrease in the defects in the carbon material in the ZrC layers. The hardness of the layers was found to decrease slightly with annealing temperature from 26.4 +/- 0.6 GPa to 21.3 +/- 0.5 GPa. Some voids initially present in the as-deposited ZrC layers closed up and particles increased in size with annealing temperature. (C) 2020 Elsevier B.V. All rights reserved.
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页数:9
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