Field-effect a-Si:H solar cells with transparent conductive oxide comb-shaped electrodes

被引:4
作者
Matsuki, N
Abiko, Y
Miyazaki, K
Kobayashi, M
Fujioka, H
Koinuma, H
机构
[1] Kangawa Acad Sci & Technol, Flexible Devices Project, Kawasaki, Kanagawa 2130012, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Tokai Univ, Inst Ind Sci, Meguro Ku, Tokyo 1530041, Japan
[4] Japan Sci & Technol Corp, CREST, Shinjuku Ku, Tokyo 1690072, Japan
关键词
field-effect (145); amorphous silicon; solar cells (441); plasma enhanced chemical vapor deposition;
D O I
10.1016/j.tsf.2004.11.228
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have developed field-effect amorphous silicon solar cells (FESC) with comb-shaped electrodes (CSE) made of transparent conductive oxide (TCO). The FESC is based on the concept of utilizing a special window layer, in which carriers are induced by the field-effect instead of heavy impurity doping, to form a pin (or nip) junction. Pulsed laser deposition was used to fabricate a TCO CSE with a ZnO/ITO/ZnO stacked-layer structure. The FESC exhibited enhanced current output on applying a bias voltage for the field-effect. The conversion efficiency of the field-effect operation was improved by 39% compared with a FESC with a metal CSE. The fill factor was improved markedly by applying a TCO to the CSE. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:210 / 213
页数:4
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