Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

被引：109

作者：

Rozen, John ^{[1
]}

Ahyi, Ayayi C. ^{[2
]}

Zhu, Xingguang ^{[2
]}

Williams, John R. ^{[2
]}

Feldman, Leonard C. ^{[1
,3
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Rutgers State Univ, Inst Adv Mat Devices & Nanotechnol, Piscataway, NJ 08854 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 11期

关键词：

Charge carrier mobility; interface state density; MOS devices; nitrogen incorporation; semiconductor-insulator interfaces; silicon carbide; 4H-SIC MOSFETS; INVERSION-LAYERS;

D O I：

10.1109/TED.2011.2164800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The direct impact of the SiO2/4H-SiC interface state density (D-it) on the channel mobility of lateral field-effect transistors is studied by tailoring the trap distribution via nitridation of the thermal gate oxide. We observe that mobility scales like the inverse of the charged state density, which is consistent with Coulomb-scattering-limited transport at the interface. We also conclude that the D-it further impacts even the best devices by screening the gate potential, yielding small subthreshold swings and poor turn-ON characteristics.

引用

页码：3808 / 3811

页数：4

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