Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

被引:13
作者
Pan, W. [1 ,2 ,3 ]
Kang, W. [4 ]
Lilly, M. P. [3 ]
Reno, J. L. [3 ]
Baldwin, K. W. [5 ]
West, K. W. [5 ]
Pfeiffer, L. N. [5 ]
Tsui, D. C. [5 ]
机构
[1] Sandia Natl Labs, Dept Mat Phys, Livermore, CA 94551 USA
[2] Sandia Natl Labs, Quantum Phenomena Dept, Albuquerque, NM 87185 USA
[3] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA
[4] Univ Chicago, Dept Phys, Chicago, IL 60637 USA
[5] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
COMPOSITE FERMIONS; STATISTICS; STATES; ENERGIES; PHASE; GAP;
D O I
10.1103/PhysRevLett.124.156801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7. and its particle-hole conjugate states at filling factors 1-nu = 2/3, 3/5, 4/7. have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1-nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.
引用
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页数:6
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