Adsorption induced giant faceting of vicinal Si(001)

被引:15
|
作者
Horn-von Hoegen, M
Heringdorf, FJMZ
Kähler, D
Schmidt, T
Bauer, E
机构
[1] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Sincrotrone Trieste, I-34012 Trieste, Italy
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
关键词
Si(001); low energy electron microscopy; faceting; step bunching; adsorption;
D O I
10.1016/S0040-6090(98)01293-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Adsorption of Au at 800 degrees C results in a dramatic change of the regular step morphology of 4 degrees vicinal Si(001): the surface decomposes into areas which are perfectly flat with a (001)-orientation and (119) facets. Extremely straight superterraces with a length limited only by the size of the sample (here 4 mm) and a width ranging from 400 nm up to 4 mu m are formed by massive Si mass transport. The extreme aspect ratio of 1:10 000 of this submicron structures is attributed to a localized nucleation. The nucleation and formation process during Au adsorption has been studied using low energy electron microscopy (LEEM) and shows a strongly anisotropic growth with a speed of propagation of the superterraces of up to 100 mu m/s. Proportional to the Au coverage the width and area of (001) terraces increases, The steps of the vicinal surface are accumulated in irregular step bunches. With further increasing Au coverage the step bunches are transformed into well defined (119) facets. Light diffraction and microscopy have been used to characterize ex situ the macroscopic Large scale features of the facet structure. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:16 / 21
页数:6
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