In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy

被引：5

作者：

Hou, HQ ^{[1
]}

Hammons, BE ^{[1
]}

Breiland, WG ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

基金：

美国能源部;

关键词：

in situ etching; AsCl3; selective etching; MOVPE;

D O I：

10.1016/S0022-0248(98)00733-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In situ etching of GaAs with AsCl3 in metalorganic vapor-phase epitaxy (MOVPE) reactor was studied with in situ reflectometry as a function of the AsCl3 flow rate, substrate temperature, and AsH3 flow rate during etching. A smooth and uniform etched surface was successfully achieved at substrate temperatures above 680 degrees C. The etch rate was found to be proportional to the flow rate of AsCl3, and exhibited Arrhenius temperature dependence with an activation energy of similar to 1 eV. The etching was also found to be very selective towards the Al composition in AlGaAs, and stopped abruptly on AlGaAs. This process has applications for MOVPE regrowth on an AlGaAs surface after a selective in situ etch of the GaAs cap layer. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：199 / 204

页数：6

共 9 条

[1] VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE [J].