A Ku-band Dual-SPDT RF-MEMS Switch by Double-Side SOI Bulk Micromachining

被引：17

作者：

Yamane, Daisuke ^{[1
,2
]}

Sun, Winston ^{[1
,2
]}

Seita, Harunobu ^{[3
]}

Kawasaki, Shigeo ^{[4
]}

Fujita, Hiroyuki ^{[2
]}

Toshiyoshi, Hiroshi ^{[1
,2
]}

机构：

[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1538904, Japan

[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[3] Kyoto Univ, Res Inst Sustainable Humanosphere, Kyoto 6110011, Japan

[4] Japan Aerosp Explorat Agcy, Sagamihara, Kanagawa 2298510, Japan

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2011年 / 20卷 / 05期

关键词：

Bulk micromachining; deep reactive-ion etching (DRIE); dual single-pole double-throw (dual-SPDT); gold electroplating; ohmic contact; radio-frequency microelectromechanical systems (RF-MEMS) switch; X-Ku-band; LOW-VOLTAGE; DESIGN;

D O I：

10.1109/JMEMS.2011.2162490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication method, and measurement results of a low-loss ohmic-contact radio-frequency microelectromechanical systems (MEMS) switch. A novel bidirectional electrostatic actuation mechanism has been developed for a dual single-pole double-throw switch that could be used for an X-Ku-band low-temperature cofired ceramic switched-line-type phase shifter. A high-aspect-ratio deep reactiveion etching process and a thick gold-plating process were used to develop low-insertion-loss air-suspended MEMS waveguides and low resistive ohmic contacts. A typical insertion loss of 0.56 dB, a return loss of 19.4 dB, and an isolation of 51.4 dB were obtained at a Ku-band frequency of 12 GHz. [2010-0364]

引用

页码：1211 / 1221

页数：11

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