Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

被引：16

作者：

Rao, V ^{[1
]}

Hutchinson, J

Holl, S

Langston, J

Henderson, C

Wheeler, DR

Cardinale, G

O'Connell, D

Goldsmith, J

Bohland, J

Taylor, G

Sinta, R

机构：

[1] Intel Corp, Santa Clara, CA 95052 USA

[2] Sandia Natl Labs, Livermore, CA 94551 USA

[3] Shipley Co, Marlborough, MA 01752 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The maturity and acceptance of top surface imaging (TSI) technology have been hampered by several factors including inadequate resist sensitivity and line edge roughness. We have found that the use of a chemically amplified resist can improve the sensitivity in these systems by 1.5-2x without compromising the Line edge roughness. In addition, we have shown improved line edge roughness by increasing the molecular weight of the polymeric resin in the resist. Using these materials approaches, we have been able to show excellent resolution images with the TSI-process for both 193 nm and extreme ultraviolet (13.4 nm) patterning: (C) 1998 American Vacuum Society. [S0734-211X(98)17006-3].

引用

页码：3722 / 3725

页数：4

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