Voltage-controlled magnetic anisotropy and voltage-induced Dzyaloshinskii-Moriya interaction change at the epitaxial Fe(001)/MgO(001) interface engineered by Co and Pd atomic-layer insertion

被引：20

作者：

Suwardy, Joko ^{[1
]}

Nawaoka, Kohei ^{[1
]}

Cho, Jaehun ^{[1
]}

Goto, Minori ^{[1
,2
]}

Suzuki, Yoshishige ^{[1
,2
]}

Miwa, Shinji ^{[1
,2
,3
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, CSRN, Toyonaka, Osaka 5608531, Japan

[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

PHYSICAL REVIEW B | 2018年 / 98卷 / 14期

基金：

日本学术振兴会;

关键词：

FIELD-INDUCED MODIFICATION; MAGNETOCRYSTALLINE ANISOTROPY; FILMS; SPIN;

D O I：

10.1103/PhysRevB.98.144432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated epitaxial multilayers with Co and Pd atomic-layer insertion at Fe(001)/MgO(001) interface and systematically investigated voltage-controlled magnetic anisotropy (VCMA) and voltage-induced interfacial Dzyaloshinskii-Moriya interaction (iDMI) change. The VCMA and iDMI change was characterized by spinwave spectroscopy. We found that the VCMA was increased by Co and Pd insertions to -180 fJ/Vm in the Fe/Co/Pd/MgO system. We also found a large voltage-induced iDMI change of 65 fJ/Vm. The postannealing dependence of the VCMA and iDMI change was also characterized to investigate the influence of the change in chemical ordering around the MgO interface.

引用

页数：8

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