Thermoelectric properties of Sb-doped Mg2Si by solid state reaction

被引：9

作者：

Zhang, LM ^{[1
]}

Wang, CB ^{[1
]}

Jiang, HY ^{[1
]}

Shen, Q ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年

关键词：

D O I：

10.1109/ICT.2003.1287470

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In the present paper, Sb-doped Mg2Si thermoelectric materials were successfully prepared by solid state reaction. Effects of doped Sb on the structure and thermoelectric properties of the Mg2Si compounds were mainly investigated. The results show that the power factor of Mg2Si increases to 3.3 x 10(-3) W/mK(2) at about 650K when doped with 0.5wt%Sb, much higher than the pure Mg2Si or Mg2Si-based compounds fabricated by the traditional fusion method and SPS method. It is also found that the forbidden energy gap of the system is reduced because the doped Sb introduces lots of defects and thus it is easier for the electrons to transit. As a result, the Seebeck coefficient and electrical conductivity of Sb-doped Mg2Si compounds are increased considerably.

引用

页码：146 / 148

页数：3

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