Surface contrast in two dimensionally nucleated misfit dislocations in InAs/GaAs(110) heteroepitaxy

被引：95

作者：

Belk, JG ^{[1
]}

Sudijono, JL ^{[1
]}

Zhang, XM ^{[1
]}

Neave, JH ^{[1
]}

Jones, TS ^{[1
]}

Joyce, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.78.475

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy has been used to study misfit-dislocation (MD) induced lattice distortion of the epilayer for InAs thin films grown on GaAs(110). Two-dimensional (2D) islands with regular size are observed in the first two monolayers. Interfacial MDs, identified in the images by an array of dark lines, appear following the coalescence of the 2D islands. The growth mode remains 2D for all coverages and the vertical contrast of these Lines decreases with: film thickness. The surface contrast can be explained only by classical elasticity theory if the properties of a thin InAs film with an exposed surface are considered.

引用

页码：475 / 478

页数：4

共 19 条

[1] Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4x4) [J].

Belk, JG ;

Sudijono, JL ;

Holmes, DM ;

McConville, CF ;

Jones, TS ;

Joyce, BA .

SURFACE SCIENCE, 1996, 365 (03) :735-742

[2] Free surface relaxation of a hexagonal network of misfit dislocations [J].

Bonnet, R .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1996, 73 (04) :1193-1209

[3] RELAXED GEXSI1-X STRUCTURES FOR III-V INTEGRATION WITH SI AND HIGH MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI [J].

FITZGERALD, EA ;

XIE, YH ;

MONROE, D ;

SILVERMAN, PJ ;

KUO, JM ;

KORTAN, AR ;

THIEL, FA ;

WEIR, BE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1807-1819

[4] IMAGING OF MISFIT DISLOCATION FORMATION IN STRAINED-LAYER HETEROEPITAXY BY ULTRAHIGH-VACUUM SCANNING-TUNNELING-MICROSCOPY [J].

FRANK, N ;

SPRINGHOLZ, G ;

BAUER, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2236-2239

[5]

HE ZQ, 1993, J CRYST GROWTH, V132, P331

[6]

HIRSCH PB, ELECT MICROSCOPY THI

[7]

HOEGEN MH, 1993, SURF SCI, V284, P53

[8] Different growth modes in GaAs(110) homoepitaxy [J].

Holmes, DM ;

Belk, JG ;

Sudijono, JL ;

Neave, JH ;

Jones, TS ;

Joyce, BA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :849-853

[9] Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure [J].

Holt, D. B. .

JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) :280-295

[10] SCANNING TUNNELING MICROSCOPY OF SURFACTANT-MEDIATED EPITAXY OF GE ON SI(111) - STRAIN RELIEF MECHANISMS AND GROWTH-KINETICS [J].

MEYER, G ;

VOIGTLANDER, B ;

AMER, NM .

SURFACE SCIENCE, 1992, 274 (02) :L541-L545

← 1 2 →