Influence of p/i interface treatment on the flexible thin film solar cells for application in building integrated photovoltaics

被引：1

作者：

Lei Jin Song ^{[1
,2
]}

Zou Yin Sheng ^{[2
]}

Zhang Zhao Qiang ^{[1
]}

机构：

[1] Southwest Univ Sci & Technol, Coll Civil Engn & Architecture, Mianyang 621010, Sichuan, Peoples R China

[2] Hunan Univ, Coll Civil Engn, Changsha 410082, Hunan, Peoples R China

来源：

APPLICATIONS OF ENGINEERING MATERIALS, PTS 1-4 | 2011年 / 287-290卷

关键词：

building integrated photovoltaics; flexible thin film solar cells; p/i interface; H plasma treatment; nucleation layer; OPEN CIRCUIT VOLTAGE; P-I-N; SILICON; DEPOSITION; SI;

D O I：

10.4028/www.scientific.net/AMR.287-290.1259

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nip type flexible a-Si solar cells for application in building integrated photovoltaics (BIPV) were deposited by plasma enhanced chemical vapor deposition (PECVD) method. In order to improve the efficiency and stability of the device, p-type microcrystalline silicon (mu c-Si:H) film was used as the window layers. H plasma treatment was applied on the p/i interface and nucleation layer was introduced to enhance the deposition of p-type mu c-Si:H film on the surface of a-Si:H. Results suggest that with the application of H plasma treatment and the nucleation layer introduction, high quality p-type pc-Si:H film and high efficiency flexible solar cells were obtained.

引用

页码：1259 / +

页数：2

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