Tip-Enhanced Raman Scattering of MoS2

被引：35

作者：

Voronine, Dmitri V. ^{[1
]}

Lu, Gaotian ^{[1
]}

Zhu, Daoquan ^{[1
]}

Krayev, Andrey ^{[2
]}

机构：

[1] Texas A&M Univ, Inst Quantum Sci & Engn, College Stn, TX 77843 USA

[2] AIST NT Inc, Navato, CA 94949 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2017年 / 23卷 / 01期

关键词：

Transition metal dichalcogenides; MoS2; tip-enhanced Raman scattering (TERS); VALLEY POLARIZATION; CHEMICAL-ANALYSIS; MONOLAYER MOS2; SPECTROSCOPY; PHOTOLUMINESCENCE; BULK;

D O I：

10.1109/JSTQE.2016.2584784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed structural characterization of novel two-dimensional materials plays a key role in understanding their properties and designing optoelectronic devices. High resolution spatial imaging is important for characterizing defects, edges, and grain boundaries. We use tip-enhanced Raman scattering (TERS) to obtain nanoscale vibrational images of monolayer and few-layer MoS2. We compare near-field and far-field Raman maps and demonstrate high spatial resolution and signal enhancement for various vibrational modes and peak ratios. We observe different spectral behavior and enhancement of edges and inner areas. We show that TERS provides valuable complementary nanoscale information to topographic scanning probe microscopy.

引用

页码：138 / 143

页数：6