Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

被引：0
|
作者：
Zhang, Ying-Ying [1 ]
Zhong, Zhun [1 ]
Li, Shi-Guang [1 ]
Jung, Soon-Yen [1 ]
Park, Kee-Young [1 ]
Lee, Ga-Won [1 ]
Wang, Jin-Suk [1 ]
Oh, Jung-Woo
Majhi, Prashant
Tseng, Hsing-Huang
Lee, Hi-Deok [1 ]
机构：
[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea
来源：
EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY | 2008年
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T [工业技术];
学科分类号：
08 ;
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页码：158 / 161
页数：4
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