High Performance Indium-Gallium-Zinc Oxide Thin Film Transistor via Interface Engineering

被引：40

作者：

Zhao, Yepin ^{[1
,2
]}

Wang, Zhengxu ^{[1
,2
]}

Xu, Guangwei ^{[1
,2
,3
]}

Cai, Le ^{[1
,2
]}

Han, Tae-Hee ^{[1
,2
,4
]}

Zhang, Anni ^{[1
,2
]}

Wu, Quantan ^{[1
,2
]}

Wang, Rui ^{[1
,2
]}

Huang, Tianyi ^{[1
,2
]}

Cheng, Pei ^{[1
,2
]}

Chang, Sheng-Yung ^{[1
,2
]}

Bao, Daqian ^{[1
,2
]}

Zhao, Zhiyu ^{[1
,2
]}

Wang, Minhuan ^{[1
,2
]}

Huang, Yijie ^{[1
,2
]}

Yang, Yang ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif Nano Syst Inst, Los Angeles, CA 90095 USA

[3] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China

[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea

来源：

ADVANCED FUNCTIONAL MATERIALS | 2020年 / 30卷 / 34期

关键词：

bi-functional acid modification; contact resistance; indium-gallium-zinc-oxide; solution-processed transistors; thin film transistors; DEPOSITION; COBALT;

D O I：

10.1002/adfm.202003285

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution-processed indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs) have become well known in recent decades for their promising commercial potential. However, the unsatisfactory performance of small-sized IGZO TFTs is limiting their applicability. To address this issue, this work introduces an interface engineering method of bi-functional acid modification to regulate the interfaces between electrodes and the channels of IGZO TFTs. This method increases the interface oxygen vacancy concentration and reduces the surface roughness, resulting in higher mobility and enhanced contact at the interfaces. The TFT devices thus treated display contact resistance reduction from 9.1 to 2.3 k omega mm, as measured by the gated four-probe method, as well as field-effect mobility increase from 1.5 to 4.5 cm(2)(V s)(-1). Additionally, a 12 x 12 organic light emitting diode display constructed using the acid modified IGZO TFTs as switching and driving elements demonstrate the applicability of these devices.

引用

页数：6

共 38 条

[11] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].