Valence band localized states in double quantum wells from first principles

被引：0

作者：

Castaneda Medina, Arcesio ^{[1
]}

Gutierrez, Rafael M. ^{[1
]}

机构：

[1] Univ Antonio Narino, Bogota, Colombia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 12期

关键词：

density functional theory; heterostructures; quantum wells; OFFSETS;

D O I：

10.1002/pssb.201147246

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrostatic potentials and electronic structure of an AlAs/GaAs double quantum well (DQW) heterostructure are determined through ab initio computations. The study of the potentials along the growth direction establishes a clear relation between the microscopic structure and the relevant macroscopic properties of the heterostructure, namely, the DQW dimensions and the band offsets. At nanometric scale, the one electron effective potential energy is a DQW and the valence band edge electronic states are confined along the growth direction. Such states coincide qualitatively with those analytically obtained through the so-called envelope function/effective mass approximation. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2877 / 2883

页数：7

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