Advanced Numerical Characterization of Mono-Crystalline Copper with Defects

被引:16
|
作者
Zhan, H. F. [1 ]
Gu, Y. T. [1 ]
Yarlagadda, P. K. D. V. [1 ]
机构
[1] Queensland Univ Technol, Sch Engn Syst, Brisbane, Qcd 4001, Australia
关键词
Copper; Defect; Molecular Dynamics; Nanoindentation; Tension; MOLECULAR-DYNAMICS SIMULATION; INDUCED PHASE-TRANSFORMATION; EMBEDDED-ATOM-METHOD; DISLOCATION NUCLEATION; CU NANOWIRES; ATOMISTIC SIMULATIONS; TENSILE DEFORMATION; FCC METALS; NANOINDENTATION; INDENTATION;
D O I
10.1166/asl.2011.1496
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Based on the embedded atom method (EAM) and molecular dynamics (MD) method, the mono-crystalline copper with different defects is investigated through tension and nanoindentation simulation. The single-crystal copper nanowire with surface defects is firstly studied through tension. For validation, the tension simulations for nanowire without defect are carried out under different temperatures and strain rates. The defects on nanowires are then systematically studied in considering different defects orientation distribution. It is found that the Young's modulus is insensitive of surface defects and centro-plane defects. However, the yield strength and yield point show a significant decrease due to the different defects. Specially, the 450 defect in surface and in (200) plane exerts the biggest influence to the yield strength, about 34.20% and 51.45% decrease are observed, respectively. Different defects are observed to serve as a dislocation source and different necking positions of the nanowires during tension are found. During nanoindentation simulation, dislocation is found nucleating below the contact area, but no obvious dislocation is generated around the nano-cavity. Comparing with the perfect substrate during nanoindentation, the substrate with nano-cavities emerged less dislocations, it is supposed that the nanocavity absorbed part of the indent energy, and less plastic deformation happened in the defected substrate.
引用
收藏
页码:1293 / 1301
页数:9
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