High nitrogen pressure solution growth of bulk GaN in "feed-seed" configuration

被引：13

作者：

Bockowski, M. ^{[1
,2
]}

Grzegory, I. ^{[1
,2
]}

Lucznik, B. ^{[1
,2
]}

Sochacki, T. ^{[1
]}

Krysko, M. ^{[1
]}

Strak, P. ^{[1
]}

Dziecielewski, I. ^{[1
]}

Litwin-Staszewska, E. ^{[1
]}

Porowski, S. ^{[1
]}

机构：

[1] PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 07期

关键词：

growth; high nitrogen pressure solution; HVPE growth; seeded growth;

D O I：

10.1002/pssa.201000981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper the growth and physical properties of HNPS-GaN crystallized in "feed-seed" configuration is described. The idea of this configuration is based on the conversion of the free standing HVPE-GaN crystals to the free standing HNPS-GaN. The influence of the c-plane bowing in the initial substrate on quality, rate, and mode of growth from solution is analyzed. (C) 2011 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim

引用

页码：1507 / 1510

页数：4