Tuning of intraband absorption and photoresponse in self-assembled InAs/GaAs quantum dots by thermal annealing

被引：12

作者：

Ng, W. H. ^{[1
]}

Zibik, E. A. ^{[1
]}

Wilson, L. R. ^{[1
]}

Skolnick, M. S. ^{[1
]}

Cockburn, J. W. ^{[1
]}

Steer, M. J. ^{[2
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] EPSRC Natl Ctr III V Technol, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2875242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the thermal annealing on the conduction band states in self-assembled quantum dots (QDs) have been investigated using midinfrared absorption and photocurrent spectroscopies. We demonstrate a significant tuning of the intraband electron transition energies (similar to 15%) upon annealing due to the reduction in the confinement energy, observed both in intraband absorption and photocurrent spectra. More uniform QD size distribution in the growth direction after annealing results in narrowing of the absorption peak. We also observe additional intersublevel transitions arising after QD annealing. (C) 2008 American Institute of Physics.

引用

页数：3

共 16 条

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