Characterization of AZO/p-Si heterojunction prepared by DC magnetron sputtering

被引：34

作者：

Bo, He ^{[1
]}

Quan, Ma Zhong ^{[1
]}

Jing, Xu ^{[2
]}

Lei, Zhao ^{[1
]}

Sheng, Zhang Nan ^{[1
]}

Feng, Li ^{[1
]}

Cheng, Shen ^{[1
]}

Ling, Shen ^{[1
]}

Yue, Zhou Cheng ^{[1
]}

Shan, Yu Zheng ^{[3
]}

Ting, Yin Yan ^{[3
]}

机构：

[1] Shanghai Univ, Dept Phys, SHU Solar E PV Lab, Shanghai 200444, Peoples R China

[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[3] Solar Enertech Shanghai Co Ltd, Shanghai 201206, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2009年 / 12卷 / 06期

关键词：

Al-doped ZnO (AZO); Direct-current (DC) magnetron sputtering; Heterojunction; Current-voltage (I-V) characteristics; FILMS;

D O I：

10.1016/j.mssp.2009.12.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-doped ZnO (AZO) film was deposited by direct-current (DC) magnetron sputtering on p-Si (1 0 0) wafer to fabricate Al-doped n-ZnO/p-Si heterojunctions. The microstructural, optical and electrical properties of the AZO film were characterized by XRD, SEM; UV-vis spectrophotometer; four-point probe and Hall effect measurement, respectively. Results show that the AZO film is of good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 20.1 and 1.19 x 10(-4) A, respectively. The value of I-F/I-R (I-F and I-R stand for forward and reverse current, respectively) at 5V is found to be as high as 19.7. It shows fairly good rectifying behavior, indicating formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of AZO film is good enough to transmit light into p-Si. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：248 / 252

页数：5

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