THz-photomixer based on quasi-ballistic transport

被引:56
作者
Döhler, GH
Renner, F
Klar, O
Eckardt, M
Schwanhäusser, A
Malzer, S
Driscoll, D
Hanson, M
Gossard, AC
Loata, G
Löffler, T
Roskos, H
机构
[1] Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Max Planck Res Grp Opt Informat & Photon, D-91058 Erlangen, Germany
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93116 USA
[4] Goethe Univ Frankfurt, Inst Phys, D-6000 Frankfurt, Germany
关键词
D O I
10.1088/0268-1242/20/7/007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on a novel concept for THz photomixers with high conversion efficiency up to several THz. In contrast to the conventional pin photomixer we can overcome the trade-off between either optimizing transit-time or RC-roll-off. Using quasi-ballistic transport in nano-pin-diodes the transport path can be optimized regarding both path length and transit time. Independently, the capacitance can be kept small by using a sufficiently large number of optimized nano-pin-diodes in series. The concept is presented in detail and first experimental results are reported which corroborate our theoretical expectations.
引用
收藏
页码:S178 / S190
页数:13
相关论文
共 17 条
  • [1] THz Generation by Photomixing in Ultrafast Photoconductors
    Brown, E.R.
    [J]. International Journal of High Speed Electronics and Systems, 2003, 13 (02) : 497 - 545
  • [2] BROWN ER, 1995, APL, V66, P4903
  • [3] Exotic transport regime in GaAs:: absence of intervalley scattering leading to quasi-ballistic, real-space THz oscillations
    Eckardt, M
    Schwanhäusser, A
    Robledo, L
    Malzer, S
    Döhler, GH
    Betz, M
    Trumm, S
    Leitenstorfer, A
    Müller, T
    Unterrainer, K
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S195 - S198
  • [4] ECKARDT M, 2004, PHYS MIKROSTRUKT HAL, V33, P146
  • [5] Continuous THz-wave generation using antenna-integrated uni-travelling-carrier photodiodes
    Ito, H
    Nakajima, F
    Furuta, T
    Ishibashi, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (07) : S191 - S198
  • [6] Ultrafast uni-traveling-carrier photodiodes for measurement and sensing systems
    Ito, H
    Nagatsuma, T
    [J]. QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE, 2003, 4999 : 156 - 166
  • [7] High-speed and high-output-power uni-taveling-carrier photodiodes
    Ito, H
    Nagatsuma, T
    [J]. ACTIVE AND PASSIVE OPTICAL COMPONENTS FOR WDM COMMUNICATIONS III, 2003, 5246 : 465 - 479
  • [8] Terahertz semiconductor-heterostructure laser
    Köhler, R
    Tredicucci, A
    Beltram, F
    Beere, HE
    Linfield, EH
    Davies, AG
    Ritchie, DA
    Iotti, RC
    Rossi, F
    [J]. NATURE, 2002, 417 (6885) : 156 - 159
  • [9] Femtosecond charge transport in polar semiconductors
    Leitenstorfer, A
    Hunsche, S
    Shah, J
    Nuss, MC
    Knox, WH
    [J]. PHYSICAL REVIEW LETTERS, 1999, 82 (25) : 5140 - 5143
  • [10] Femtosecond high-field transport in compound semiconductors
    Leitenstorfer, A
    Hunsche, S
    Shah, J
    Nuss, MC
    Knox, WH
    [J]. PHYSICAL REVIEW B, 2000, 61 (24) : 16642 - 16652