THz-photomixer based on quasi-ballistic transport

被引：56

作者：

Döhler, GH

Renner, F

Klar, O

Eckardt, M

Schwanhäusser, A

Malzer, S

Driscoll, D

Hanson, M

Gossard, AC

Loata, G

Löffler, T

Roskos, H

机构：

[1] Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Max Planck Res Grp Opt Informat & Photon, D-91058 Erlangen, Germany

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93116 USA

[4] Goethe Univ Frankfurt, Inst Phys, D-6000 Frankfurt, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 07期

关键词：

D O I：

10.1088/0268-1242/20/7/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a novel concept for THz photomixers with high conversion efficiency up to several THz. In contrast to the conventional pin photomixer we can overcome the trade-off between either optimizing transit-time or RC-roll-off. Using quasi-ballistic transport in nano-pin-diodes the transport path can be optimized regarding both path length and transit time. Independently, the capacitance can be kept small by using a sufficiently large number of optimized nano-pin-diodes in series. The concept is presented in detail and first experimental results are reported which corroborate our theoretical expectations.

引用

页码：S178 / S190

页数：13

共 17 条

[1] THz Generation by Photomixing in Ultrafast Photoconductors [J].