1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates

被引：3

作者：

Matsuda, S ^{[1
]}

Asahi, H ^{[1
]}

Mori, J ^{[1
]}

Watanabe, D ^{[1
]}

Asami, K ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 6B期

关键词：

quantum dot; self-formation; GaAs/InAs short-period superlattice; InP (411)A substrate; gas-source MBE; STM; PL;

D O I：

10.1143/JJAP.40.L586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(GaAS)(2)(InAs)(2) short-period superlattices (SLs) were grown on InP (411)A substrates by gas-source molecular-beam epitaxy. Scanning tunneling microscopy observations revealed that the lateral-composition-modulated quantum dot structures were self-formed. They were aligned periodically along two perpendicular lateral directions with a lateral density of approximately 10(11) cm(-2). Multilayer quantum dot structures sandwiched between InP barrier layers showed strong photoluminescence emission with wavelengths of 1.3-1.6 mum depending on the SL period.

引用

页码：L586 / L588

页数：3

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