Temperature-dependent ultraviolet Raman scattering and anomalous Raman phenomenon of AlGaN/GaN heterostructure

被引：6
作者：
Liu, Yanli [1 ]
Chen, Dunjun [2 ]
Wei, Guangfen [1 ]
Lin, Zhonghai [1 ]
He, Aixiang [1 ]
Li, Meihua [1 ]
Wang, Pingjian [1 ]
Zhang, Rong [2 ]
Zheng, Youdou [2 ]
机构：
[1] Shandong Technol & Business Univ, Sch Informat & Elect Engn, Yantai 264005, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Kev Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
来源：
OPTICS EXPRESS | 2019年 / 27卷 / 04期
基金：
中国国家自然科学基金;
关键词：
ELECTRON-MOBILITY TRANSISTORS; HEMTS; GAN;
D O I：
10.1364/OE.27.004781
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Temperature-dependent ultraviolet (UV) Raman scattering from AlGaN/GaN heterostructure is investigated. Compared to the visible Raman spectrtun, four new peaks at 600, 700, 780, and 840 cm(-1) are observed in the UV Raman spectrum. The peak at 780 cm(-1) is from the AlGaN A(1)(LO) mode. According to the calculated dispersion relations of the interface phonon modes in the AlGaN/GaN heterostructure, the peaks at 600 and 840 cm(-1) correspond to interface phonon modes. Meanwhile, the peak at 700 cm(-1) is attributed to the disorder-active mode near the 2DEG interface. Due to the near-resonant enhancement effect, the intensities of the GaN A(1)(LO) mode, interface phonon modes, disorder active mode and the AlGaN A(1)(LO) mode exhibit different temperature dependence. Furthermore, the frequencies of the interface phonon modes and the disorder active mode show anomalous temperature dependence, which can be attributed to the strong built-in electric field near the 2DEG interface. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：4781 / 4788
页数：8
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