Schottky Junctions Studied Using Korringa-Kohn-Rostoker Nonequilibrium Green's Function Method

被引：2
|
作者：
Ogura, Masako [1 ,2 ]
Akai, Hisazumi [3 ]
机构：
[1] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan
[2] Univ Munich, Dept Chem, Butenandtstr 11, D-81377 Munich, Germany
[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2016年 / 85卷 / 10期
关键词：
D O I：
10.7566/JPSJ.85.104715
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A scheme that combines the nonequilibrium Green's function method with the Korringa-Kohn-Rostoker Green's function method is proposed. The method is applied to Schottky junctions composed of an Al/GaN/Al trilayer. The results show that a Schottky barrier is formed at an undoped GaN and Al interface. The transport property of this system under various finite bias voltages is calculated. It is shown that the asymmetric behavior of electron transport against the direction of bias voltage occurs in this system, confirming the feature of rectification.
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页数：7
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