InAs avalanche photodiodes for X-ray detection

被引：3

作者：

Gomes, R. B. ^{[1
]}

Tan, C. H. ^{[1
]}

Ker, P. J. ^{[1
]}

David, J. P. R. ^{[1
]}

Ng, J. S. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF INSTRUMENTATION | 2011年 / 6卷

基金：

英国工程与自然科学研究理事会; 英国科学技术设施理事会;

关键词：

Solid state detectors; Charge transport and multiplication in solid media; Avalanche-induced secondary effects; Detector modelling and simulations II (electric fields; charge transport; multiplication and induction; pulse formation; electron emission; etc); EXCESS NOISE; MULTIPLICATION; IONIZATION; DEPENDENCE;

D O I：

10.1088/1748-0221/6/12/P12005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work we present the first InAs avalanche photodiode (APD) for X-ray detection and demonstrate the improved energy resolution due to its avalanche gain. Under the radiation from a Fe-55 radioactive X-ray source the full width at half maximum (FWHM) at 5.9 keV peak reduces as the avalanche gain increases. The FWHM drops from 2.02 keV at an avalanche gain of 1.58 to 950 eV at a gain of 5.3. The FWHM was larger than the fano-limited value due to the noise from accompanying electronics and the increased leakage current introduced by the diode packaging.

引用

页数：10