NO gas sensing kinetics at room temperature under UV light irradiation of In2O3 nanostructures

被引：104

作者：

Nguyen Duc Chinh ^{[1
]}

Nguyen Duc Quang ^{[1
]}

Lee, Hyundong ^{[1
]}

Truong Thi Hien ^{[1
]}

Nguyen Minh Hieu ^{[1
]}

Kim, Dahye ^{[1
]}

Kim, Chunjoong ^{[1
]}

Kim, Dojin ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 34134, South Korea

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

FILM SENSORS; GRAIN-SIZE; TIN OXIDE; SNO2; TIO2; THIN; SENSITIVITY; PERFORMANCE; ACTIVATION;

D O I：

10.1038/srep35066

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In2O3 nanostructure sensors were fabricated by arc-discharging a source composed of a graphite tube containing indium. The NO gas sensing properties, as well as the morphology, structure, and electrical properties, were examined at room temperature under UV light illumination. In particular, the response and recovery kinetics of the sensor at room temperature under various UV light intensities were studied. The maximum response signal was observed at an intermediate UV light intensity, which could be corroborated by a nano-size effect based on the conduction model of a resistive chemical nano sensor. The mechanism for the enhanced adsorption/desorption kinetics for NO in an air environment under UV light irradiation is discussed in detail. Furthermore, the general requirements of the sensor, including the stability, repeatability, and selectivity, are discussed.

引用

页数：11

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