Electron trapping by self-trapped hole pairs and small rare-earth clusters in Sm-doped CaF2

被引:7
作者
Beck, W
Fedorov, VV
Ricard, D
Flytzanis, C
Basiev, TT
机构
[1] Ecole Polytech, CNRS, Opt Quant Lab, F-91128 Palaiseau, France
[2] Moscow Gen Phys Inst, Moscow 117942, Russia
关键词
photoionization; rare earth ions; self-trapped holes;
D O I
10.1016/S0022-2313(98)00045-3
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper we investigate the mechanisms for electron trapping, following photoionization of Sm2+ in gamma- and non-gamma-irradiated samples of Sm-doped CaF2. Using linear absorption, fluorescence and site-selective coherent anti-Stokes Raman excitation spectroscopy, we show that the electron traps in non-gamma-irradiated CaF2:Sm are small clusters of trivalent Sm ions. In the gamma-irradiated samples, we observe the formation of self-trapped holes after photoionization, which provides us with additional evidence for the existence of self-trapped hole pairs in gamma-irradiated rare-earth-doped CaF2. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:241 / 248
页数:8
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