Quenching and room-temperature annealing effects on the conductivity of underdoped HoBa2Cu3O7-δ

被引：4

作者：

Khadzhai, G. Ya. ^{[1
]}

Vovk, R. V. ^{[1
]}

Vovk, N. R. ^{[1
]}

Boiko, Yu. I. ^{[1
]}

Kamchatnaya, S. N. ^{[1
]}

Pinto Simoes, V. M. ^{[2
]}

Dobrovolskiy, O. V. ^{[1
,3
]}

机构：

[1] V Karazin Kharkiv Natl Univ, Phys Dept, UA-61077 Kharkov, Ukraine

[2] ISEC Lisboa, Inst Super Educ Ciencias, P-1750142 Lisbon, Portugal

[3] Goethe Univ, Phys Inst, D-60438 Frankfurt, Germany

来源：

MODERN PHYSICS LETTERS B | 2018年 / 32卷 / 01期

关键词：

Superconducting cuprates; holmium; annealing; electrical resistance measurements; YBA2CU3O7-DELTA SINGLE-CRYSTALS; ELECTRICAL-RESISTANCE; HYDROSTATIC-PRESSURE; FLUCTUATION CONDUCTIVITY; TRANSITION-METALS; MAGNETIC-FIELD; OXYGEN-CONTENT; COMPOUNDS R=Y; PSEUDO-GAP; WIDE-RANGE;

D O I：

10.1142/S0217984917503675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of quenching from 600 degrees C and subsequent room-temperature annealing on the basal-plane electrical resistivity of underdoped HoBa2Cu3O7-delta single crystals are investigated. Regions with different superconducting transition temperatures, T-c, have been revealed in the sample after quenching and attributed to a non-uniform distribution of the labile oxygen in the sample volume. Room-temperature annealing has been revealed to lead to an increase of T-c of all regions and a decrease of their number, attributed to the coalescence of clusters of oxygen vacancies. The temperature dependence of the resistance in the normal state is characterized by a decrease of the residual resistivity and the phonon scattering coefficient.

引用

页数：11

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