Activation annealing of Si-implanted GaN up to 1500°C using a novel RTP technique

A novel rapid thermal processing (RTP) unit called Zapper(TM) has recently been developed by MHI Inc. and the University of Florida for high temperature thermal processing of semiconductors. This Zapper(TM) unit is capable of reaching much higher temperatures (> 1500 degrees C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. Implant activation annealing studies of Si+-implanted GaN thin films (with and without an AIN encapsulation layer) have been conducted using the Zapper(TM) unit at temperatures up to 1500 degrees C. The measurements of electrical properties of such annealed samples have led to the conclusion that high annealing temperatures and AIN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper(TM) unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide bandgap compound semiconductors that require very high processing temperatures.