Full-band Monte Carlo device simulation for hot carrier transport phenomena

被引：0

作者：

Iizuka, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Tokyo, Japan

来源：

NEC RESEARCH & DEVELOPMENT | 1998年 / 39卷 / 04期

关键词：

Monte Carlo (MC); hot carriers; Si devices; device simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One problem threatening Si device operation is along-term characteristics degradation due to hot carriers. Identifying hot carriers in position and energy space is made possible through Full-Band Monte Carlo (FBMC) device simulation. In this paper, the FBMC technique is reviewed and its numerical aspects toward high-performance computing are described. Finally, hot carrier transport properties, such as substrate current characteristics and MOS interface hot carrier concentrations are shown for a 0.2 mu m nMOSFET.

引用

页码：469 / 475

页数：7

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