Recent Progress in Development Orientation-Patterned GaP for Next-Generation Frequency Conversion Devices

被引：0

作者：

Tassev, V. ^{[1
]}

Snure, M. ^{[1
]}

Peterson, R. ^{[1
]}

Schepler, K. ^{[1
]}

Bedford, R. ^{[1
]}

Mann, M. ^{[1
]}

Vangala, S. ^{[1
,2
]}

Goodhue, W. ^{[3
]}

Lin, A. ^{[3
]}

Harris, J. ^{[4
]}

Fejer, M. ^{[4
]}

Schunemann, P. ^{[5
]}

机构：

[1] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] Solid State Sci Corp, Hollis, NH 03049 USA

[3] Univ Massachusetts, Photon Ctr, Lowell, MA 01854 USA

[4] Stanford Univ, Stanford, CA 94305 USA

[5] BAE Syst Inc, Nashua, NH 03061 USA

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年

关键词：

ABSORPTION; GAAS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Progress in developing a cost effective technique for fabrication of orientation patterned GaP templates and a reliable technology for thick epitaxial growth on them is described. First 350 mu m thick device quality OPGaP is produced.

引用

页数：2

共 7 条

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