Simulation of space-charge effects on the leakage currents in (Ba, Sr)TiO3 thin films

被引：2
作者：
Li, JT [1 ]
Dong, XL [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
来源：
PHYSICS LETTERS A | 2005年 / 340卷 / 1-4期
关键词：
thin films; (Ba; Sr)TiO3; leakage current; computer simulation; space charge;
D O I：
10.1016/j.physleta.2005.03.072
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The combined leakage current model of thermionic emission and carrier drift diffusion mechanisms is derived from previous studies for (Ba, Sr)TiO3 (BST) thin films. Numerical simulations have been performed to investigate the effects of space charge on the leakage currents of BST thin films with Pt electrodes. The effects of the magnitude of the net donor concentration and the heavily charged depletion layers at both cathode and anode interfaces have been studied. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：303 / 308
页数：6
相关论文
共 21 条
  • [11] A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes
    Hwang, CS
    Lee, BT
    Kang, CS
    Kim, JW
    Lee, KH
    Cho, HJ
    Horii, H
    Kim, WD
    Lee, SI
    Roh, YB
    Lee, MY
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) : 3703 - 3713
  • [12] DEPOSITION OF EXTREMELY THIN (BA,SR)TIO3 THIN-FILMS FOR ULTRA-LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION
    HWANG, CS
    PARK, SO
    CHO, HJ
    KANG, CS
    KANG, HK
    LEE, SI
    LEE, MY
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2819 - 2821
  • [13] MEASUREMENT OF NONLINEAR POLARIZATION OF KTAO3 USING SCHOTTKY DIODES
    KAHNG, D
    WEMPLE, SH
    [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2925 - &
  • [14] Model of leakage characteristics of (Ba, Sr)TiO3 thin films
    Maruno, S
    Kuroiwa, T
    Mikami, N
    Sato, K
    Ohmura, S
    Kaida, M
    Yasue, T
    Koshikawa, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 954 - 956
  • [15] Deuterium in (Ba,Sr)TiO3 thin films:: Kinetics and mechanisms of incorporation and removal during annealing
    McIntyre, PC
    Ahn, JH
    Becker, RJ
    Wang, RV
    Gilbert, SR
    Mirkarimi, LW
    Schulberg, MT
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6378 - 6388
  • [16] Leakage currents in high-permittivity thin films
    Schroeder, H
    Schmitz, S
    Meuffels, P
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (05) : 781 - 783
  • [17] Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films
    Shin, JC
    Park, J
    Hwang, CS
    Kim, HJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) : 506 - 513
  • [18] POTENTIAL BARRIERS + EMISSION-LIMITED CURRENT FLOW BETWEEN CLOSELY SPACED PARALLEL METAL ELECTRODES
    SIMMONS, JG
    [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2472 - &
  • [19] SZE SM, 1981, PHYS SEMICONDUCTOR D, P260
  • [20] Optimized deposition of PLD-derived Ba0.8Sr0.2TiO3 thin film capacitor
    Xing, S
    Song, ZT
    Lin, CL
    [J]. MATERIALS LETTERS, 2002, 54 (5-6) : 447 - 451
123