electroabsorption modulator;
linear transfer function;
composite quantum-well;
SFDR;
D O I:
10.1093/ietele/e88-c.5.967
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We proposed a novel structure that improved the linear characteristics of electroabsorption modulator (EAM) with composite quantum-wells as an absorption core layer. We fabricated three types of EAM's whose active cores were 8 nm thick, 12 nm thick and a composite core with 8 nm thick and 12 nm thick quantum-well (QW), respectively. The transfer functions of EAM's were investigated and their third-order inter-modulation distortion (IMD3) was obtained by calculation. The spurious free dynamic range (SFDR) was measured and compared with three types of QW. The linearity of the device with composite quantum-well showed a large enhancement in SFDR by 9.3 dB . Hz2/3 in TE mode and 7.0 dB . Hz2/3 in TM mode compared with the conventional EAM.
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Yang, Jun
Bhattacharya, Pallab
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机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Bhattacharya, Pallab
Wu, Zhuang
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机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
机构:
Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, JapanMitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, Japan
Miyazaki, Y
Tada, H
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机构:
Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, JapanMitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, Japan
Tada, H
Aoyagi, T
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机构:
Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, JapanMitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, Japan
Aoyagi, T
Nishimura, T
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机构:
Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, JapanMitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, Japan
Nishimura, T
Mitsui, Y
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机构:
Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, JapanMitsubishi Electr Corp, High Frequency & Opt Semicond Div, Hyogo 6648641, Japan
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Qasaimeh, O
Bhattacharya, P
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机构:Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Bhattacharya, P
Croke, ET
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机构:Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA