High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal

被引：1

作者：

Lee, Yao-Jen ^{[1
,2
]}

Lu, Yu-Lun ^{[3
]}

Mu, Zheng-Chang ^{[3
]}

Hsueh, Fu-Kuo ^{[1
,3
]}

Chao, Tien-Sheng ^{[3
]}

Wu, Ching-Yi ^{[4
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[4] Dayeh Univ, Dept Elect Engn, Changhua 51591, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

D O I：

10.1149/1.3536462

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this letter, rapid thermal annealing (RTA) and microwave annealing (MA) are compared to demonstrate the dopant activation. Using microwave annealing, the dopant in the Si was well-activated and showed suppressed dopant diffusion, as compared to traditional high temperature RTA. In addition, SiNx films after low temperature MA treatment presented higher tensile stress than the films annealed by RTA. Therefore, this MA approach could potentially be applied to these behaviors of I distribution and higher tensile stress SiNx film may be useful in contact etch-stop layer or stress memorization technique in the fabrication of small pitch nanoscaled n-channel Metal-Oxide-Semiconductor Field Effect Transistors. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3536462] All rights reserved.

引用

页码：H191 / H193

页数：3

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