Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

被引：8
|
作者：
Gao, L. N. [1 ]
Zhai, J. W. [1 ]
Yao, X. [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai Key Lab Special Artificial Microstruct M, Dept Phys, Shanghai 200092, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 09期
基金：
中国博士后科学基金;
关键词：
Thin film; Sol-gel; Dielectric properties; Orientation; Tunability; ORIENTATION; TUNABILITY; TA2O5; TIO2;
D O I：
10.1016/j.apsusc.2010.10.132
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ba(Zr0.20Ti0.80)O-3 (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(1 1 1)/Ti/SiO2/Si substrates by a sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si substrates exhibit highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si substrates with MgO and ZrO2 buffer layers show highly (1 1 0) preferred orientation. At 100 kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(1 1 1)/Ti/SiO2/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：3836 / 3839
页数：4
相关论文
共 50 条
  • [41] Enhanced dielectric properties of LSCO-buffered Ba(Sn0.05Ti0.95)O3 thin film prepared by sol-gel processing
    Song, Sannian
    Zhai, Jiwei
    Yao, Xi
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2007, 44 (01) : 75 - 79
  • [42] Ferroelectric and piezoelectric properties of Ba(Ti0.89Sn0.11)O3 thin films prepared by sol-gel method
    Zhu, Zhaowang
    Guo, Xinli
    Wang, Zengmei
    Yuan, Guoliang
    Wang, Yiping
    Cai, Zhonglan
    Chen, Liufang
    Chen, Jian
    Zhang, Yao
    Liu, Zhiguo
    CHEMICAL PHYSICS LETTERS, 2015, 638 : 168 - 172
  • [43] Structural and optical properties of Ba(Ti1-x,Nix)O3 thin films prepared by sol-gel process
    Yang, Juntao
    Zhang, Ting
    Ni, Manman
    Ding, Linghong
    Zhang, W. F.
    APPLIED SURFACE SCIENCE, 2009, 256 (01) : 17 - 20
  • [44] Dielectric and feffoelectric properties of Ba(Sn0.15Ti0.85)O3 thin films grown by a sol-gel process
    Zhai, JW
    Shen, B
    Yao, X
    Zhang, LY
    MATERIALS RESEARCH BULLETIN, 2004, 39 (11) : 1599 - 1606
  • [45] Dielectric analysis on optical properties of ZrO2 thin films dispersed with silver nanoparticles prepared by sol-gel method
    Wakaki, Moriaki
    Yokoyama, Eisuke
    OPTICAL COMPONENTS AND MATERIALS VIII, 2011, 7934
  • [46] Film Thickness-Dependent Microstructures and Dielectric properties of Pb(Zr,Ti)O3 Thick Films by Sol-Gel Processing
    Zhang, Yating
    Chou, Xiujian
    Geng, Wenping
    Tian, Ying
    Xiong, Jijun
    Guo, Tao
    INFORMATION ENGINEERING FOR MECHANICS AND MATERIALS SCIENCE, PTS 1 AND 2, 2011, 80-81 : 688 - 692
  • [47] PREPARATION OF FERROELECTRIC (PB, LA)(ZR, TI)O3 THIN-FILMS BY SOL-GEL PROCESS AND DIELECTRIC-PROPERTIES
    KAWANO, T
    SEI, T
    TSUCHIYA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B): : 2178 - 2181
  • [48] PREPARATION OF Pb(Zr,Ti)O3 THIN FILMS AND POWDERS BY THE SOL-GEL PROCESS
    Ozenbas, Macit
    Ergin, Umit
    FERROELECTRICS, 1996, 186 : 219 - 222
  • [49] Sol-gel derived Pb(Zr,Ti)O3 thin films:: Residual stress and electrical properties
    Ong, RJ
    Berfield, TA
    Sottos, NR
    Payne, DA
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) : 2247 - 2251
  • [50] Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method
    Tseng, Ching-Fang
    Yang, Pai-Chuan
    Lai, Chun-Hung
    Lee, Chih-Wen
    ADVANCED ENGINEERING MATERIALS, PTS 1-3, 2011, 194-196 : 2249 - +
12345