Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

被引：8
作者：
Gao, L. N. [1 ]
Zhai, J. W. [1 ]
Yao, X. [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai Key Lab Special Artificial Microstruct M, Dept Phys, Shanghai 200092, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 09期
基金：
中国博士后科学基金;
关键词：
Thin film; Sol-gel; Dielectric properties; Orientation; Tunability; ORIENTATION; TUNABILITY; TA2O5; TIO2;
D O I：
10.1016/j.apsusc.2010.10.132
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ba(Zr0.20Ti0.80)O-3 (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(1 1 1)/Ti/SiO2/Si substrates by a sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si substrates exhibit highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si substrates with MgO and ZrO2 buffer layers show highly (1 1 0) preferred orientation. At 100 kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(1 1 1)/Ti/SiO2/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：3836 / 3839
页数：4
相关论文
共 27 条
[11]   Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate [J].
Lee, SY ;
Tseng, TY .
APPLIED PHYSICS LETTERS, 2002, 80 (10) :1797-1799
[12]   Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films [J].
Miao, J. ;
Yuan, J. ;
Wu, H. ;
Yang, S. B. ;
Xu, B. ;
Cao, L. X. ;
Zhao, B. R. .
APPLIED PHYSICS LETTERS, 2007, 90 (02)
[13]   Orientation dependent microwave dielectric properties of ferroelectric Ba1-xSrxTiO3 thin films [J].
Moon, SE ;
Kim, EK ;
Kwak, MH ;
Ryu, HC ;
Kim, YT ;
Kang, KY ;
Lee, SJ ;
Kim, WJ .
APPLIED PHYSICS LETTERS, 2003, 83 (11) :2166-2168
[14]   Thin film ferroelectrics for capacitor applications [J].
O'Neill, D ;
Catalan, G ;
Porras, F ;
Bowman, RM ;
Gregg, JM .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (03) :199-205
[15]   The effect of stress on the dielectric properties of barium strontium titanate thin films [J].
Shaw, TM ;
Suo, Z ;
Huang, M ;
Liniger, E ;
Laibowitz, RB ;
Baniecki, JD .
APPLIED PHYSICS LETTERS, 1999, 75 (14) :2129-2131
[16]   Orientation control and dielectric properties of sol-gel deposited Ba(Sn0.15Ti0.85)O3 thin films grown on Pt/Ti/SiO2/Si substrates [J].
Song, S. N. ;
Zhai, J. W. ;
Yao, X. .
JOURNAL OF CRYSTAL GROWTH, 2007, 308 (01) :223-227
[17]   Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr,Ti)O3 thin films prepared by pulsed laser deposition [J].
Tang, X. G. ;
Tian, H. Y. ;
Wang, J. ;
Wong, K. H. ;
Chan, H. L. W. .
APPLIED PHYSICS LETTERS, 2006, 89 (14)
[18]   Dielectric properties of (100)-oriented Ba(Zr,Ti)O3/La0.7Ca0.3MnO3 heterostructure thin films prepared by pulsed laser deposition [J].
Tang, X. G. ;
Zheng, R. K. ;
Jiang, Y. P. ;
Chan, H. L. W. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (15) :3394-3399
[19]   Diffuse phase transition and dielectric tunability of Ba(ZryTi1-y)O3 relaxor ferroelectric ceramics [J].
Tang, XG ;
Chew, KH ;
Chan, HLW .
ACTA MATERIALIA, 2004, 52 (17) :5177-5183
[20]   Piezoelectric properties of rhombohedral Pb(Zr, Ti)O3 thin films with (100), (111), and "random" crystallographic orientation [J].
Taylor, DV ;
Damjanovic, D .
APPLIED PHYSICS LETTERS, 2000, 76 (12) :1615-1617
123