Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

被引：8

作者：

Gao, L. N. ^{[1
]}

Zhai, J. W. ^{[1
]}

Yao, X. ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai Key Lab Special Artificial Microstruct M, Dept Phys, Shanghai 200092, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 09期

基金：

中国博士后科学基金;

关键词：

Thin film; Sol-gel; Dielectric properties; Orientation; Tunability; ORIENTATION; TUNABILITY; TA2O5; TIO2;

D O I：

10.1016/j.apsusc.2010.10.132

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ba(Zr0.20Ti0.80)O-3 (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(1 1 1)/Ti/SiO2/Si substrates by a sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si substrates exhibit highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si substrates with MgO and ZrO2 buffer layers show highly (1 1 0) preferred orientation. At 100 kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(1 1 1)/Ti/SiO2/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3836 / 3839

页数：4

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