Ultra-Low-k Dielectric Degradation before Breakdown

被引：4

作者：

Breuer, T. ^{[1
]}

Kerst, U. ^{[1
]}

Boit, C. ^{[1
]}

Langer, E. ^{[2
]}

Ruelke, H. ^{[2
]}

机构：

[1] TU Berlin, Berlin Inst Technol, Semicond Devices Div, Einsteinufer 19,Sekr E2, D-10587 Berlin, Germany

[2] One Ltd Liabil Co & Co KG, Globalfoundries Dresden Module, D-01109 Dresden, Germany

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

dielectric; degradation; ultra-low-k; ULK; SiCOH; breakdown; pores;

D O I：

10.1109/IRPS.2010.5488710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a basic investigation of Ultra Low K (ULK) SiCOH dielectrics degradation before breakdown. For the first time very early stages of degradation before breakdown have been revealed and a theory of the basic process of ULK alteration under electrical stress has been proposed. Tip electrode test structures have been specifically designed for this investigation in order to determine the location of degradation and breakdown. A stepwise increased voltage stress test with a meticulously observed current in fA range was developed and successfully applied.

引用

页码：890 / 894

页数：5

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