Three-dimensional crystalline Si film growth by the Ni silicide mediation

被引：19

作者：

Kim, Joondong ^{[1
]}

Han, Chang-Soo ^{[1
]}

Park, Yun Chang ^{[2
]}

Anderson, Wayne A. ^{[3
]}

机构：

[1] KIMM, Nanomech Syst Res Ctr, Taejon 305343, South Korea

[2] Natl Nanofab Ctr, Measurement & Anal Div, Taejon 305343, South Korea

[3] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.2828202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three-dimensional crystalline Si films were grown by the Ni silicide mediation. The metal-induced growth method, which is a spontaneous reaction of metal and silicon, forms a silicide layer first then induces the crystalline Si growth. By controlling the reaction between Ni and Si, the silicide formation was modulated. The NiSi2 migration crystallizes a Si film behind and mediates crystalline Si above it. The mechanism of silicide-mediated three-dimensional Si crystallization and the thin Si film Schottky photodiode are presented. (C) 2008 American Institute of Physics.

引用

页数：3

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