High-temperature HgTe/CdTe multiple-quantum-well lasers

被引：30

作者：

Vurgaftman, I ^{[1
]}

Meyer, JR ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

OPTICS EXPRESS | 1998年 / 2卷 / 04期

关键词：

D O I：

10.1364/OE.2.000137

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

While most previous studies of Hg-based mid-IR lasers have focused on either bulk Hg1-xCdxTe alloys or thick (> 100 Angstrom) Hg1-xCdxTe quantum wells with relatively large x, we show that much thinner (20-30 Angstrom) HgTe binary wells may be engineered to suppress both Auger recombination and intervalence free carrier absorption. On the basis of detailed numerical simulations, we predict 4.3 mu m cw emission at temperatures up to 220 K for optical pumping and 105 K for diode operation. In pulsed mode, we expect maximum lasing temperatures more than 100 K higher than any prior Hg-based mid-IR result. (C) 1998 Optical Society of America.

引用

收藏

页码：137 / 142

页数：6

相关论文

共 50 条

[31] Colloidal CdTe/HgTe quantum dots with high photoluminescence quantum efficiency at room temperature [J].

Kershaw, SV ;

Burt, M ;

Harrison, M ;

Rogach, A ;

Weller, H ;

Eychmüller, A .

APPLIED PHYSICS LETTERS, 1999, 75 (12) :1694-1696

[32] Colloidal CdTe/HgTe quantum dots with high photoluminescence quantum efficiency at room temperature [J].

BT Labs, Martlesham Heath, Ipswich, Suffolk, IPS 3RE, United Kingdom ;

不详 ;

不详 .

Appl Phys Lett, 12 (1694-1696)

[33] HIGH-SPEED GAAS/ALGAAS MULTIPLE-QUANTUM-WELL LASERS - DESIGN AND CHARACTERIZATION .1. [J].

ESQUIVIAS, I ;

WEISSER, S ;

RALSTON, JD ;

GALLAGHER, DFG ;

LARKINS, EC ;

TASKER, PJ ;

ROSENZWEIG, J ;

FLEISSNER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) :2660-2661

[34] THE GAIN-LEVER EFFECT IN INGAASP/INP MULTIPLE-QUANTUM-WELL LASERS [J].

SELTZER, CP ;

WESTBROOK, LD ;

WICKES, HJ .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1995, 13 (02) :283-289

[35] PURE STRAIN EFFECTS IN STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS [J].

YASAKA, H ;

IGA, R ;

NOGUCHI, Y ;

YOSHIKUNI, Y .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (08) :826-828

[36] TAPERED WAVE-GUIDE INGAAS/INGAASP MULTIPLE-QUANTUM-WELL LASERS [J].

KOCH, TL ;

KOREN, U ;

EISENSTEIN, G ;

YOUNG, MG ;

ORON, M ;

GILES, CR ;

MILLER, BI .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) :88-90

[37] GAIN CHARACTERISTICS OF 1.55-MU-M HIGH-SPEED MULTIPLE-QUANTUM-WELL LASERS [J].

MORTON, PA ;

ACKERMAN, DA ;

SHTENGEL, GE ;

KAZARINOV, RF ;

HYBERTSEN, MS ;

TANBUNEK, T ;

LOGAN, RA ;

SERGENT, AM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (08) :833-835

[38] Polariton effects in multiple-quantum-well structures of CdTe/Cd1-xZnxTe [J].

dAubigne, YM ;

Wasiela, A ;

Mariette, H ;

Dietl, T .

PHYSICAL REVIEW B, 1996, 54 (19) :14003-14011

[39] Comparison of band-filling and gain models for multiple-quantum-well lasers [J].

Heinamaki, A ;

Tulkki, J .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3268-3275

[40] PURE EFFECTS OF STRAIN IN STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS [J].

YASAKA, H ;

IGA, R ;

NOGUCHI, Y ;

YOSHIKUNI, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (04) :1098-1103

← 1 2 3 4 5 →