CMOS compatible integrated thermoelectric sensors usog novel frontside micromachining

被引：0

作者：

Socher, E ^{[1
]}

Bochobza-Degani, O ^{[1
]}

Nemirovsky, Y ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Kidron Microelect Res Ctr, MEMS Grp, IL-32000 Haifa, Israel

来源：

SENSORS AND MICROSYSTEMS | 2000年

关键词：

D O I：

10.1142/9789812792013_0055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside RIE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/root Hz and response times down to 3 msec in 70*70 m(2) pixels.

引用

页码：313 / 316

页数：4